8:30 – 9:00
9:00 – 10:20
10:20 – 12:10
13:20 – 15:30
Bio
Dr. Markus Pfeffer, Fab Manger Pi-Fab, Fraunhofer Institute for Integrated Systems and Device Technology IISB.
Dr. Markus Pfeffer (male) holds a diploma in Electrical Engineering and a PhD (Dr.-Ing.) with specialization in manufacturing optimization both from the University of Erlangen-Nuremberg. Since 2002 he has been working at Fraunhofer IISB in the Business Department Semiconductor Technology, where he is the fab manager of the Fraunhofer IISB Pi-Fab (SiC Processing and Prototype Fabrication) and he is in charge of quality and process control as well as founded research. He was/is involved in several national and international cooperative R&D projects in different functions.
Abstract
The talk will present recent research activities of Fraunhofer IISB on Silicon Carbide (SiC) MOSFETs and provide an outlook on novel ultra-wide bandgap materials, such as Aluminum Nitride (AlN). Reducing resistive components is a primary measure for improving power switches. Recent architectural approaches toward low-resistivity SiC devices, including 3-dimensional channel arrangements and super-junction structures for high-blocking voltage and low-resistivity drift regions, will be discussed. The presentation will conclude with an outlook on material properties and related device architectures from an RTO perspective.
Bio
In 2019, Emiel graduated from the Master in Engineering Physics at Ghent University. In his final Master year, he got introduced to world of integrated photonics and for his Master thesis he worked on on-chip Raman spectroscopy at the Photonics Research Group with Prof. Roel Baets. After graduation, he decided to continue to work on sensing applications enabled by integrated photonics and he started his PhD in 2020 on silicon photonics-based Laser Doppler Vibrometry for non-contact photoacoustics at the Photonics Research Group of Ghent University and IMEC. This work has led to multiple journal publications and a patent. As from 2024, Emiel started working as business developer for the micro-transfer printing activities at Ghent-University and IMEC. Together with prof. Gunther Roelkens, he leads the business activities of Transverse, the wafer scale pilot line for micro-transfer printing. This pilot line supports companies worldwide in establishing micro-transfer printing as a key technique for advanced integration.
Abstract
Next-generation photonic integrated circuits require the heterogeneous integration of key components that cannot be readily realized in a CMOS environment, such as III-V semiconductor optical amplifiers and lasers, efficient electro-optic modulators, and optical isolators. Silicon and silicon nitride photonic platforms offer scalability and cost-effectiveness but lack essential active functionalities. Micro-transfer printing provides a scalable, high-precision method to integrate these diverse materials and devices, enabling compact, high-performance photonic circuits. In this talk, we discuss the principles of micro-transfer printing, its advantages over conventional integration techniques, and its role in advancing applications in telecommunications, data centers, LiDAR, biomedical sensing, and quantum technologies.
Bio
BALESTRA Francis, CNRS Research Director at CROMA, is Director Emeritus of the European SiNANO Institute and President of IEEE Electron Device Society France, and has been Director of several Research labs. He coordinated many European Projects (ICOS, NEREID, NANOFUNCTION, NANOSIL, etc.) that have represented unprecedented collaborations in Europe in the field of Nanoelectronics. He founded and organized many international Conferences, and has co-authored more than 500 publications. He is member of several European Scientific Councils, of the Advisory Committees of International Journals and of the IRDS (International Roadmap for Devices and Systems) International Roadmap Committee as representative of Europe.
Abstract
This presentation will deal with the Horizon Europe ICOS project dedicated to International Cooperation On Semiconductors. International cooperation is key for speeding up technological innovation, reducing cost by avoiding duplicated research, boosting the resilience of the semiconductor value and supply chains, and is one of the objectives of the EU Chips Act. The objectives and first important ICOS results will be highlighted, including the analysis of the semiconductor economic and technological landscapes in Europe and leading semiconductor Countries, the identification of important technological areas for potential cooperation and the proposition of opportunities for bilateral or multilateral research collaborations, particularly in the areas of advanced functionalities and computing.
15:30 – 16:35
16:35 – 18:35
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TITLE: International Cooperation On Semiconductors START-END: January 2023 – December2025
EU CONTRIBUTION: 2, 99M€
TOPIC: HORIZON-CL4-2022-DIGITAL-EMERGING-01
Coordinator: Francis Balestra
ICOS has received funding (2023 – 2025) from the European Union’s Horizon Europe research and innovation programme under GA No 101092562.